Structural optimization and engineering of InxGa1−xN quantum dot intermediate band solar cells with intrinsic GaN interlayers

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dc.contributor.affiliation000000041762408X
dc.contributor.affiliationDepartment of Electronics Engineering, Dong-A University, Busan, 49315, South Korea; School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China; School of Micro and Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, State Key Labs of Silicon Materials, Micro-Nano Fabrication Center, Zhejiang University, Hangzhou, 311200, China; IMDEA-Nanociencia, Campus de Cantoblanco, Madrid, 28049, Spainen
dc.contributor.authorEric D.
dc.contributor.authorJiang J.
dc.contributor.authorImran A.
dc.contributor.authorKhan A.A.
dc.date.accessioned2024-10-08T07:41:03Z
dc.date.available2024-10-08T07:41:03Z
dc.date.issued2024
dc.format.mimetypeapplication/pdf
dc.identifier.doi10.1039/d4ya00103f
dc.identifier.urihttps://hdl.handle.net/20.500.12614/3788
dc.journal.titleEnergy Advances
dc.language.isoen
dc.page.initial1632
dc.rightsAtribucion-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleStructural optimization and engineering of InxGa1−xN quantum dot intermediate band solar cells with intrinsic GaN interlayers
dc.typeresearch article
dc.type.hasVersionVoR
dc.volume.number3

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