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Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride

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dc.contributor.affiliation000000041762408X
dc.contributor.authorLong, Min
dc.contributor.authorZhan, Zhen
dc.contributor.authorPantaleón, Pierre A.
dc.contributor.authorSilva-Guillén, José Ángel
dc.contributor.authorGuinea, Francisco
dc.contributor.authorYuan, Shengjun
dc.date.accessioned2023-02-28T08:39:51Z
dc.date.available2023-02-28T08:39:51Z
dc.date.issued2022-11-30
dc.format.mimetypeapplication/pdfen
dc.identifier.urihttp://hdl.handle.net/20.500.12614/3276
dc.language.isoenen
dc.relation.isreferencedbyhttps://repositorio.imdeananociencia.org/handle/20.500.12614/3284
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitrideen
dc.typepreprinten
dc.type.hasVersionAOen
dspace.entity.typePublication

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