Nishiguchi K.Castellanos-Gomez A.Yamaguchi H.Fujiwara A.Van Der Zant H.S.J.Steele G.A.2020-12-042020-12-042015http://hdl.handle.net/20.500.12614/1083enAtribución-NoComercial-SinDerivadas 3.0 EspañaObserving the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel dioderesearch article10.1063/1.4927529open access