Electrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3

López A.Tornos J.Peralta A.Barbero I.Fernandez-Canizares F.Sanchez-Santolino G.Varela M.Rivera A.Camarero, JulioLeón C.Santamaría J.Romera M.2023-06-012023-06-012023http://hdl.handle.net/20.500.12614/3343application/pdfenAtribución-NoComercial-SinDerivadas 3.0 EspañaAtribución-NoComercial-SinDerivadas 3.0 EspañaElectrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3research article10.1002/aelm.202300007open access