Molina-Mendoza A.J.Barawi M.Biele R.Flores E.Ares J.R.Sánchez C.Rubio-Bollinger G.Agraït, NicolásD'Agosta R.Ferrer I.J.Castellanos-Gomez A.2020-12-042020-12-042015http://hdl.handle.net/20.500.12614/1209enAtribución-NoComercial-SinDerivadas 3.0 EspañaElectronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3research article10.1002/aelm.201500126open access