RT Journal Article
T1 Room temperature Mott metal-insulator transition in V2O3compounds induced via strain-engineering
A1 Homm P., 
A1 Menghini, Mariela
A1 Seo J.W., 
A1 Peters S., 
A1 Locquet J.-P., 
YR 2021
FD 2021
LK http://hdl.handle.net/20.500.12614/2529
UL http://hdl.handle.net/20.500.12614/2529
LA en
DS Repositorio institucional de IMDEA Nanociencia
RD 16 may. 2026