TY  - JOUR
AU  - Nishiguchi K.
AU  - Castellanos-Gomez A.
AU  - Yamaguchi H.
AU  - Fujiwara A.
AU  - Van Der Zant H.S.J.
AU  - Steele G.A.
PY  - 2015
DO  - 10.1063/1.4927529
UR  - http://hdl.handle.net/20.500.12614/1083
T2  - Applied Physics Letters
LA  - en
TI  - Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
TY  - research article
VL  - 107
ER  -