RT Journal Article
T1 Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
A1 Nishiguchi K., 
A1 Castellanos-Gomez A., 
A1 Yamaguchi H., 
A1 Fujiwara A., 
A1 Van Der Zant H.S.J., 
A1 Steele G.A., 
YR 2015
FD 2015
LK http://hdl.handle.net/20.500.12614/1083
UL http://hdl.handle.net/20.500.12614/1083
LA en
DS Repositorio institucional de IMDEA Nanociencia
RD 16 may. 2026