RT Journal Article
T1 Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
A1 Quereda J., 
A1 Palacios J.J., 
A1 Agraït, Nicolás
A1 Castellanos-Gomez A., 
A1 Rubio-Bollinger G., 
YR 2017
FD 2017
LK http://hdl.handle.net/20.500.12614/1315
UL http://hdl.handle.net/20.500.12614/1315
LA en
DS Repositorio institucional de IMDEA Nanociencia
RD 29 abr. 2026