TY  - JOUR
AU  - Ghasemi F.
AU  - Frisenda R.
AU  - Dumcenco D.
AU  - Kis A.
AU  - de Lara D.P.
AU  - Castellanos-Gomez A.
PY  - 2017
DO  - 10.3390/electronics6020028
UR  - http://hdl.handle.net/20.500.12614/1316
T2  - Electronics (Switzerland)
LA  - en
TI  - High throughput characterization of epitaxially grown single-layer MoS2
TY  - research article
VL  - 6
ER  -