RT Journal Article
T1 Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
A1 Island J.O., 
A1 Kuc A., 
A1 Diependaal E.H., 
A1 Bratschitsch R., 
A1 Van Der Zant H.S.J., 
A1 Heine T., 
A1 Castellanos-Gomez A., 
YR 2016
FD 2016
LK http://hdl.handle.net/20.500.12614/508
UL http://hdl.handle.net/20.500.12614/508
LA en
DS Repositorio institucional de IMDEA Nanociencia
RD 29 abr. 2026