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Electrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3
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Electrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3
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Adv Elect Materials - 2023 - L pez - Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0 7Sr0 3MnO3.pdf
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Date
2023
Authors
López A.
Tornos J.
Peralta A.
Barbero I.
Fernandez-Canizares F.
Sanchez-Santolino G.
Varela M.
Rivera A.
Camarero, Julio
León C.
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http://hdl.handle.net/20.500.12614/3343
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