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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

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dc.contributor.affiliation"Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, Torino, 10135, Italy"," International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Ibaraki, Tsukuba, 305-0044, Japan"," IMEC, Kapeldreef 75, Heverlee, Leuven, B-3001, Belgium"," Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, NB, Enschede, 7522, Netherlands"," Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan"," School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287, United States"," VTT Technical Research Centre of Finland Ltd., VTT, P.O. Box 1000, Espoo, FI-02044, Finland"," IMDEA Nanociencia, Calle Faraday 9, Madrid, E28049, Spain"," Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Barcelona, 08193, Spain"," Department of Applied Science and Technology, Politecnico di Torino, C.so Duca degli Abruzzi 24, Torino, 10129, Italy"," Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Emil-Figge-Straße 68, Dortmund, D-44227, Germany"," JARA - Fundamentals for Future Information Technology, Jülich, 52425, Germany"," Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, Jülich, 52425, Germany"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorMilano G.
dc.contributor.authorAono M.
dc.contributor.authorBoarino L.
dc.contributor.authorCelano U.
dc.contributor.authorHasegawa T.
dc.contributor.authorKozicki M.
dc.contributor.authorMajumdar S.
dc.contributor.authorMenghini, Mariela
dc.contributor.authorMiranda E.
dc.contributor.authorRicciardi C.
dc.contributor.authorTappertzhofen S.
dc.contributor.authorTerabe K.
dc.contributor.authorValov I.
dc.date.accessioned2022-07-19T14:12:30Z
dc.date.available2022-07-19T14:12:30Z
dc.date.issued2022
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.1002/adma.202201248en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/3123
dc.journal.titleAdvanced Materialsen
dc.language.isoenen
dc.relation.projectIDTEMPThis work was supported by the European project MEMQuD, code 20FUN06. This project (EMPIR 20FUN06 MEMQuD) has received funding from the EMPIR programme cofinanced by the Participating States and from the European Union's Horizon 2020 research and innovation programme.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleQuantum Conductance in Memristive Devices: Fundamentals, Developments, and Applicationsen
dc.typereview articleen
dc.type.hasVersionVoRen
dspace.entity.typePublication

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