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Strain engineering in semiconducting two-dimensional crystals

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dc.contributor.affiliation"Instituto de Ciencia de Materiales de Madrid, CSIC, Madrid, Spain"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Madrid, 28049, Spain"," Istituto de Sistemi Complessi, U.O.S. Sapienza, CNR, v. dei Taurini 19, Roma, 00185, Italy"," School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorRoldán R.
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorCappelluti E.
dc.contributor.authorGuinea, Francisco
dc.date.accessioned2020-12-04T12:17:54Z
dc.date.available2020-12-04T12:17:54Z
dc.date.issued2015
dc.identifier.doi10.1088/0953-8984/27/31/313201en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1080
dc.issue.number313201en
dc.journal.titleJournal of Physics Condensed Matteren
dc.language.isoenen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleStrain engineering in semiconducting two-dimensional crystalsen
dc.typereview articleen
dc.volume.number27en
dspace.entity.typePublication

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