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Room temperature Mott metal-insulator transition in V2O3compounds induced via strain-engineering

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dc.contributor.affiliationDepartment of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, Leuven, 3001, Belgium, IMDEA Nanociencia, Cantoblanco, Madrid, E-28049, Spain, Department of Materials Engineering, KU Leuven, Kasteelpark Arenberg 44, Leuven, 3001, Belgium, SENTECH Instruments GmbH, Schwarzschildstr. 2, Berlin, 12489, Germanyen
dc.contributor.affiliation000000041762408X
dc.contributor.authorHomm P.
dc.contributor.authorMenghini, Mariela
dc.contributor.authorSeo J.W.
dc.contributor.authorPeters S.
dc.contributor.authorLocquet J.-P.
dc.date.accessioned2021-03-12T09:15:04Z
dc.date.available2021-03-12T09:15:04Z
dc.date.issued2021
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.1063/5.0035865en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/2529
dc.issue.number21116en
dc.journal.titleAPL Materialsen
dc.language.isoenen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/H2020/688579/EU/PHotonic REServoir COmputing/PHRESCOen
dc.relation.projectIDTEMPThe authors acknowledge financial support from the EU H2020 Project No. 688579 PHRESCO and the KU Leuven projects (Grant No. GOA/13/011, Fundamental challenges in Semiconductors, and Grant No. C14/17/080, 2D Oxides). J. W. S and J.-P. L. are also grateful to FWO (AKUL/13/19). We thank Dr. Ruben Lieten for the program to analyze reciprocal space maps data and Dr. Ilse Lenaerts for critical reading of the manuscript. P.H. acknowledges the support from Becas Chile—CONICYT.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleRoom temperature Mott metal-insulator transition in V2O3compounds induced via strain-engineeringen
dc.typeresearch articleen
dc.type.hasVersionVoRen
dc.volume.number9en
dspace.entity.typePublication

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