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High Current Density Electrical Breakdown of TiS3 Nanoribbon-Based Field-Effect Transistors

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dc.contributor.affiliation"Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, Madrid, E-28049, Spain"," Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, Netherlands"," Materials of Interest in Renewable Energies Group (MIRE Group), Dpto. de Física de Materiales, Universidad Autónoma de Madrid, Campus de Cantoblanco, Madrid, E-28049, Spain"," Instituto de Ciencia de Materiales “Nicolás Cabrera”, Campus de Cantoblanco, Madrid, E-28049, Spain"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, Madrid, E-28049, Spain"," Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, E-28049, Spain"," Department of Physics, University of California, Santa Barbara, CA 93106-6105, United States"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorMolina-Mendoza A.J.
dc.contributor.authorIsland J.O.
dc.contributor.authorPaz W.S.
dc.contributor.authorClamagirand J.M.
dc.contributor.authorAres J.R.
dc.contributor.authorFlores E.
dc.contributor.authorLeardini F.
dc.contributor.authorSánchez C.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorRubio-Bollinger G.
dc.contributor.authorvan der Zant H.S.J.
dc.contributor.authorFerrer I.J.
dc.contributor.authorPalacios J.J.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:33:17Z
dc.date.available2020-12-04T12:33:17Z
dc.date.issued2017
dc.identifier.doi10.1002/adfm.201605647en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1345
dc.issue.number1605647en
dc.journal.titleAdvanced Functional Materialsen
dc.language.isoenen
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/604391/EU/Graphene-Based Revolutions in ICT And Beyond/GRAPHENEen
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/696656/EU/Graphene-based disruptive technologies/GrapheneCore1en
dc.relation.projectIDTEMPA.J.M.-M. and J.O.I. contributed equally to this work. A.C.-G. acknowledges financial support from the BBVA Foundation through the fellowship ?I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales? (?Semiconductores ultradelgados: hacia la optpelectronica flexible?), from the MINECO (Ram?n y Cajal 2014 program, RYC-2014-01406), from the MICINN (MAT2014-58399-JIN), and the European Commission under the Graphene Flagship, Contract No. CNECTICT-604391. A.J.M.-M., G.R.-B., and N.A. acknowledge the support of the MICCINN/MINECO (Spain) through the programs MAT2014-57915-R, BES-2012-057346, and FIS2011-23488 and Comunidad de Madrid (Spain) through the program S2013/MIT-3007 (MAD2D). J.M.C., J.R.A., E.F., F.L., C.S., and I.J.F. acknowledge financial support from MINECO-FEDER (MAT2015-65203-R) and Mexican National Council for Science and Technology (CONACIT) M?xico. J.O.I. and H.S.J.vd.Z. acknowledges the support of the Dutch organization for Fundamental Research on Matter (FOM) and by the Ministry of Education, Culture, and Science (OCW). W.S.P. acknowledges CAPES Foundation, Ministry of Education of Brazil, under Grant No. BEX 9476/13-0. W.S.P. and J.J.P. acknowledge Ministerio de Econom?a y Competitividad (Spain) for financial support under Grant No. FIS2013-47328-C02-1, the European Union structural funds and the Comunidad de Madrid MAD2D-CM program under Grant Nos. S2013/MIT-3007, the Generalitat Valenciana under Grant No. PROMETEO/2012/011. W.S.P. and J.J.P. also acknowledge the computer resources and assistance provided by the Centro de Computaci?n Cient?fica of the Universidad Aut?noma de Madrid and the RES.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleHigh Current Density Electrical Breakdown of TiS3 Nanoribbon-Based Field-Effect Transistorsen
dc.typeresearch articleen
dc.volume.number27en
dspace.entity.typePublication

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