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Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

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dc.contributor.affiliation"NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa, 243-0198, Japan"," Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, CJ 2628, Netherlands"," Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Madrid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorNishiguchi K.
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorYamaguchi H.
dc.contributor.authorFujiwara A.
dc.contributor.authorVan Der Zant H.S.J.
dc.contributor.authorSteele G.A.
dc.date.accessioned2020-12-04T12:17:54Z
dc.date.available2020-12-04T12:17:54Z
dc.date.issued2015
dc.identifier.doi10.1063/1.4927529en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1083
dc.issue.number53101en
dc.journal.titleApplied Physics Lettersen
dc.language.isoenen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleObserving the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diodeen
dc.typeresearch articleen
dc.volume.number107en
dspace.entity.typePublication

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