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Electrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3

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dc.contributor.affiliation"GFMC, Dept. Física de Materiales, Facultad de Física, Universidad Complutense de Madrid, Madrid, 28040, Spain"," IMDEA Nanociencia, C/Faraday 9, Madrid, 28049, Spain"," Unidad Asociada UCM/CSIC, Laboratorio de Heteroestructuras con Aplicación en Espintrónica, Madrid, 28049, Spain"," Instituto Pluridisciplinar, Universidad Complutense de Madrid, Madrid, 28040, Spain"," Departamento de Física de la Materia Condensada and Departamento de Física Aplicada, IFIMAC and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, Madrid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorLópez A.
dc.contributor.authorTornos J.
dc.contributor.authorPeralta A.
dc.contributor.authorBarbero I.
dc.contributor.authorFernandez-Canizares F.
dc.contributor.authorSanchez-Santolino G.
dc.contributor.authorVarela M.
dc.contributor.authorRivera A.
dc.contributor.authorCamarero, Julio
dc.contributor.authorLeón C.
dc.contributor.authorSantamaría J.
dc.contributor.authorRomera M.
dc.date.accessioned2023-06-01T11:16:00Z
dc.date.available2023-06-01T11:16:00Z
dc.date.issued2023
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.1002/aelm.202300007en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/3343
dc.journal.titleAdvanced Electronic Materialsen
dc.language.isoenes_ES
dc.relation.projectIDTEMPThis work was supported by the Spanish MCI, AEI and FEDER under Grant Nos. PID2020?116181RB?C33, PID2020?116181RB?C31 and PGC2018?099422?A?I00 (MCI/AEI/FEDER, UE) and by Comunidad de Madrid under Grant Nos. S2018/NMT?4321 (NanomagCOST?CM) and 2018?T1/IND?11935 (Atracción de Talento). A.L. was funded through the FPU Fellowship No. FPU20/02408. IMDEA?Nanociencia acknowledges support from the “Severo Ochoa” Program for Centers of Excellence in R&D (CEX2020?001039?S). F.F.?C. and M.V acknowledge financial support from Spanish MICINN PID2021?122980OB?C51 (MCI/AEI/FEDER/UE). G.S.?S. acknowledges financial support from Spanish MCI Grant Nos. RTI2018?099054?J?I00 (MCI/AEI/FEDER, UE) and IJC2018?038164?I. Electron microscopy observations were carried out at the Centro Nacional de Microscopia Electronica, CNME?UCM.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectrolyte Gated Synaptic Transistor based on an Ultra-Thin Film of La0.7Sr0.3MnO3en
dc.typeresearch articleen
dc.type.hasVersionVoRen
dspace.entity.typePublication

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