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Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

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dc.contributor.affiliation"Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, E-28049, Spain"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA—Nanociencia), Madrid, E-28049, Spain"," Instituto de Ciencia de Materiales Nicolás Cabrera, Madrid, E-28049, Spain"," Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, E-28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorQuereda J.
dc.contributor.authorPalacios J.J.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorRubio-Bollinger G.
dc.date.accessioned2020-12-04T12:32:43Z
dc.date.available2020-12-04T12:32:43Z
dc.date.issued2017
dc.identifier.doi10.1088/2053-1583/aa5920
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1315
dc.issue.number21006
dc.journal.title2D Materials
dc.language.isoen
dc.relation.projectIDTEMPThe authors acknowledge Victor Rubio for kindly providing indium tin oxide samples. GR-B, NA and JQ acknowledge financial support from MICINN/ MINECO through program MAT2014-57915-R, from Comunidad Aut?noma de Madrid through program S2013/MIT-3007 (MAD2D) and from the European Commission under the Graphene Flagship, contract CNECTICT-604391. AC-G acknowledges financial support from the BBVA Foundation through the fellowship ?I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales?, from the MINECO (Ram?n y Cajal 2014 program, RYC-2014-01406) and from the MICINN (MAT2014- 58399-JIN). JJP acknowledges Spain?s Ministerio de Econom?a y Competitividad for financial support under grant FIS2013-47328-C02-1 and the Generalitat Valenciana under grant no. PROMETEO/2012/011. Note added. During the preparation of this manuscript an article appeared showing mechanically tunable electrical performance in a vertical metal/ semiconductor/metal atomically thin structure [44], where few-layer black phosphorus is used as semiconducting layer instead of the atomically thin MoS2 layer considered in our work. Interestingly, while the I?V characteristics presented in their article almost remain unchanged when the sign of bias voltage is reversed, here we obtain markedly asymmetric I?V characteristics, leading to a strong rectifying behavior.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleStrain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices
dc.typeresearch article
dc.volume.number4
dspace.entity.typePublication
relation.isAuthorOfPublication99208583-81aa-4676-a220-08a4e5c6a6dd
relation.isAuthorOfPublication.latestForDiscovery99208583-81aa-4676-a220-08a4e5c6a6dd

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