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Reversible metal-insulator transition in SrIrO3 ultrathin layers by field effect control of inversion symmetry breaking

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dc.contributor.affiliation000000041762408X
dc.contributor.affiliation"GFMC, Universidad Complutense de Madrid, Madrid, 28040, Spain"," 2D-Foundry Group, Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, 28049, Spain"," Characterization Facility, University of Minnesota, Minneapolis, MN 55455, United States"," Informatics Institute, University of Minnesota, Minneapolis, MN 55455, United States"," Unidad Asociada UCM-ICMM CSIC “Laboratorio de Heteroestructuras con Aplicación en Spintrónica” Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, 28049, Spain"," IMDEA Nanoscience Institute, Campus Universidad Autonoma, Madrid, 28049, Spain"," Centro Nacional de Microscopia Electronica. Universidad Complutense, Madrid, 28040, Spain"," Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, 28049, Spain"en
dc.contributor.authorGallego F.
dc.contributor.authorTornos J.
dc.contributor.authorBeltran J.I.
dc.contributor.authorPeralta A.
dc.contributor.authorGarcia-Barriocanal J.
dc.contributor.authorYu G.
dc.contributor.authorRojas G.
dc.contributor.authorMunuera C.
dc.contributor.authorCabero M.
dc.contributor.authorSanchez-Manzano D.
dc.contributor.authorCuellar F.
dc.contributor.authorSanchez-Santolino G.
dc.contributor.authorSefrioui Z.
dc.contributor.authorRivera-Calzada A.
dc.contributor.authorMompean F.J.
dc.contributor.authorGarcia-Hernandez M.
dc.contributor.authorLeon C.
dc.contributor.authordel Carmen Muñoz M.
dc.contributor.authorSantamaria J.
dc.date.accessioned2023-07-31T14:18:50Z
dc.date.available2023-07-31T14:18:50Z
dc.date.issued2023
dc.format.mimetypeapplication/pdf
dc.identifier.doi10.1038/s43246-023-00362-7
dc.identifier.urihttp://hdl.handle.net/20.500.12614/3386
dc.issue.number36
dc.journal.titleCommunications Materials
dc.language.isoen
dc.relation.projectIDTEMPThe authors acknowledge receiving funding from the project To2Dox of FlagERA ERA-NET Cofund implemented within the European Union’s Horizon Europe Program. Work (J.S., C.L., F.M., M.G.-H.) supported by Spanish AEI through grants, PID2020-118078RB-I00 and by Regional Government of Madrid CAM through SINERGICO project Y2020/NMT-6661 CAIRO-CM. G.S.-S. acknowledges financial support from Spanish MCI Grant Nos. RTI2018-099054-J-I00 (MCI/AEI/FEDER, UE) and IJC2018-038164-I. M.C.M. acknowledges the financial support provided by PID2021-122980OB-C55. J.I.B. acknowledges the financial support provided by PID2021-122980OB-C51 and computational support provided by the Red Española de Supercomputación under the projects FI-2018-1-0038 and FI-2019-3-0034.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleReversible metal-insulator transition in SrIrO3 ultrathin layers by field effect control of inversion symmetry breaking
dc.typeresearch article
dc.type.hasVersionVoR
dc.volume.number4
dspace.entity.typePublication

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