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Flat bands, strains, and charge distribution in twisted bilayer h-BN

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dc.contributor.affiliationDepartment of Physics and Astronomy, University of Manchester, Manchester, M13 9PY, United Kingdom, Imdea Nanoscience, Faraday 9, Madrid, 28015, Spain, Donostia International Physics Center, Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain, Ikerbasque Basque Foundation for Science, Bilbao, Spainen
dc.contributor.affiliation000000041762408X
dc.contributor.authorWalet N.R.
dc.contributor.authorGuinea, Francisco
dc.date.accessioned2021-05-07T10:16:21Z
dc.date.available2021-05-07T10:16:21Z
dc.date.issued2021
dc.identifier.doi10.1103/PhysRevB.103.125427
dc.identifier.urihttp://hdl.handle.net/20.500.12614/2599
dc.issue.number125427
dc.journal.titlePhysical Review B
dc.language.isoen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/H2020/881603/EU/Graphene Flagship Core Project 3/GrapheneCore3
dc.relation.projectIDTEMPThis work was supported by funding from the European Commision, under the Graphene Flagship, Core 3, Grant No. 881603, and by the grants NMAT2D (Comunidad de Madrid, Spain), SprQuMat, and SEV-2016-0686 (Ministerio de Ciencia e Innovación, Spain) and ST/P004423/1 (Science and Technology Facilities Council, UK).
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleFlat bands, strains, and charge distribution in twisted bilayer h-BN
dc.typeresearch article
dc.volume.number103
dspace.entity.typePublication
relation.isAuthorOfPublicationb6753b24-6ed2-4561-b6a9-c50f6b9954ab
relation.isAuthorOfPublication.latestForDiscoveryb6753b24-6ed2-4561-b6a9-c50f6b9954ab

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