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Flat bands, strains, and charge distribution in twisted bilayer h-BN

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dc.contributor.affiliationDepartment of Physics and Astronomy, University of Manchester, Manchester, M13 9PY, United Kingdom, Imdea Nanoscience, Faraday 9, Madrid, 28015, Spain, Donostia International Physics Center, Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain, Ikerbasque Basque Foundation for Science, Bilbao, Spainen
dc.contributor.affiliation000000041762408X
dc.contributor.authorWalet N.R.
dc.contributor.authorGuinea, Francisco
dc.date.accessioned2021-05-07T10:16:21Z
dc.date.available2021-05-07T10:16:21Z
dc.date.issued2021
dc.identifier.doi10.1103/PhysRevB.103.125427en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/2599
dc.issue.number125427en
dc.journal.titlePhysical Review Ben
dc.language.isoenen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/H2020/881603/EU/Graphene Flagship Core Project 3/GrapheneCore3en
dc.relation.projectIDTEMPThis work was supported by funding from the European Commision, under the Graphene Flagship, Core 3, Grant No. 881603, and by the grants NMAT2D (Comunidad de Madrid, Spain), SprQuMat, and SEV-2016-0686 (Ministerio de Ciencia e Innovación, Spain) and ST/P004423/1 (Science and Technology Facilities Council, UK).
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleFlat bands, strains, and charge distribution in twisted bilayer h-BNen
dc.typeresearch articleen
dc.volume.number103en
dspace.entity.typePublication

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