Publication:
Electrical and geometrical tuning of MoS2 field effect transistors: Via direct nanopatterning

dc.contributor.affiliation"IMDEA Nanociencia C/Faraday 9, Madrid, 28049, Spain"," Institute for Physical Chemistry, University of Hamburg Grindelallee 117, Hamburg, 20146, Germany"," Physics Department, Lancaster University, Lancaster, LA14YB, United Kingdom"," Dep. Física de la Materia Condensada and IFIMAC, Universidad Autónoma de Madrid Cantoblanco, Madid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorUrbanos F.J.
dc.contributor.authorBlack A.
dc.contributor.authorVázquez de Parga, Amadeo L.
dc.contributor.authorMiranda, Rodolfo
dc.contributor.authorGranados, Daniel
dc.contributor.authorBernardo-Gavito, Ramón
dc.date.accessioned2020-12-04T16:44:25Z
dc.date.available2020-12-04T16:44:25Z
dc.date.issued2019
dc.format.mimetypeapplication/pdf
dc.identifier.doi10.1039/c9nr02464f
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1773
dc.journal.titleNanoscale
dc.language.isoen
dc.page.initial11152
dc.relation.projectIDTEMPThis work is partially supported by the Spanish Ministry of Economy, Industry and Competitiveness through Grant DETECTA ESP2017-86582-C4-3-R and the Comunidad de Madrid through Grant S2018/NMT-4291 TEC2SPACE-CM. D. G. acknowledges Grant RYC-2012-09864. A. L. V. P. acknowledges the Ministerio de Economía y Competitividad (MINECO) project FIS2015-67367-C2-1-P. A. B. acknowledges Graphene Core Grant H2020-FETFLAG-2014. IFIMAC acknowledges support from the “María de Maeztu” Programme for Units of Excellence in R&D (MDM-2014-0377). IMDEA Nanociencia acknowledges support from the ‘Severo Ochoa’ Programme for Centres of Excellence in R&D (MINECO, Grant SEV-2016-0686). The authors also want to acknowledge Dr Jorge Trasobares and Victor Marzoa for fruitful scientific discussions.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectrical and geometrical tuning of MoS2 field effect transistors: Via direct nanopatterning
dc.typeresearch article
dc.type.hasVersionVoR
dc.volume.number11
dspace.entity.typePublication
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relation.isAuthorOfPublication45ded901-b903-4fd7-bc51-c2a7587c3406
relation.isAuthorOfPublication5b34b8c8-da33-4a46-9caf-81a5b7b35827
relation.isAuthorOfPublication4ab1c613-bb14-47eb-8c02-44dc93763c52
relation.isAuthorOfPublication.latestForDiscovery3db9cd32-9402-4753-92b9-27f7d92bdd0e

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