Publication: Electrical and geometrical tuning of MoS2 field effect transistors: Via direct nanopatterning
| dc.contributor.affiliation | "IMDEA Nanociencia C/Faraday 9, Madrid, 28049, Spain"," Institute for Physical Chemistry, University of Hamburg Grindelallee 117, Hamburg, 20146, Germany"," Physics Department, Lancaster University, Lancaster, LA14YB, United Kingdom"," Dep. Física de la Materia Condensada and IFIMAC, Universidad Autónoma de Madrid Cantoblanco, Madid, 28049, Spain" | en |
| dc.contributor.affiliation | 000000041762408X | |
| dc.contributor.author | Urbanos F.J. | |
| dc.contributor.author | Black A. | |
| dc.contributor.author | Vázquez de Parga, Amadeo L. | |
| dc.contributor.author | Miranda, Rodolfo | |
| dc.contributor.author | Granados, Daniel | |
| dc.contributor.author | Bernardo-Gavito, Ramón | |
| dc.date.accessioned | 2020-12-04T16:44:25Z | |
| dc.date.available | 2020-12-04T16:44:25Z | |
| dc.date.issued | 2019 | |
| dc.format.mimetype | application/pdf | |
| dc.identifier.doi | 10.1039/c9nr02464f | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12614/1773 | |
| dc.journal.title | Nanoscale | |
| dc.language.iso | en | |
| dc.page.initial | 11152 | |
| dc.relation.projectIDTEMP | This work is partially supported by the Spanish Ministry of Economy, Industry and Competitiveness through Grant DETECTA ESP2017-86582-C4-3-R and the Comunidad de Madrid through Grant S2018/NMT-4291 TEC2SPACE-CM. D. G. acknowledges Grant RYC-2012-09864. A. L. V. P. acknowledges the Ministerio de Economía y Competitividad (MINECO) project FIS2015-67367-C2-1-P. A. B. acknowledges Graphene Core Grant H2020-FETFLAG-2014. IFIMAC acknowledges support from the “María de Maeztu” Programme for Units of Excellence in R&D (MDM-2014-0377). IMDEA Nanociencia acknowledges support from the ‘Severo Ochoa’ Programme for Centres of Excellence in R&D (MINECO, Grant SEV-2016-0686). The authors also want to acknowledge Dr Jorge Trasobares and Victor Marzoa for fruitful scientific discussions. | |
| dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
| dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
| dc.rights.accessRights | open access | |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
| dc.title | Electrical and geometrical tuning of MoS2 field effect transistors: Via direct nanopatterning | |
| dc.type | research article | |
| dc.type.hasVersion | VoR | |
| dc.volume.number | 11 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 3db9cd32-9402-4753-92b9-27f7d92bdd0e | |
| relation.isAuthorOfPublication | 45ded901-b903-4fd7-bc51-c2a7587c3406 | |
| relation.isAuthorOfPublication | 5b34b8c8-da33-4a46-9caf-81a5b7b35827 | |
| relation.isAuthorOfPublication | 4ab1c613-bb14-47eb-8c02-44dc93763c52 | |
| relation.isAuthorOfPublication.latestForDiscovery | 3db9cd32-9402-4753-92b9-27f7d92bdd0e |
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