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Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy

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dc.contributor.affiliationIMDEA Nanociencia, Campus Universitario de Cantoblanco, Faraday 9, Madrid, 28049, Spainen
dc.contributor.affiliation000000041762408X
dc.contributor.authorRevuelta S.
dc.contributor.authorCánovas, Enrique
dc.date.accessioned2023-04-13T10:26:05Z
dc.date.available2023-04-13T10:26:05Z
dc.date.issued2023
dc.identifier.doi10.1103/PhysRevB.107.085204
dc.identifier.urihttp://hdl.handle.net/20.500.12614/3298
dc.issue.number85204
dc.journal.titlePhysical Review B
dc.language.isoen
dc.relation.projectIDTEMPWe acknowledge financial support from Grants No. PID2019-107808RA-I00 and No. TED2021-129624B-C44 funded by MCIN/AEI/10.13039/501100011033 and by “NextGenerationEU”/PRTR. We also acknowledge financial support from the Comunidad de Madrid through Projects No. 2017-T1/AMB-5207 and No. 2021–5A/AMB-20942.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleContactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy
dc.typeresearch article
dc.volume.number107
dspace.entity.typePublication
relation.isAuthorOfPublicationa1d69b8d-fa00-40ab-b1df-7e999940f791
relation.isAuthorOfPublication.latestForDiscoverya1d69b8d-fa00-40ab-b1df-7e999940f791

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