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Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures

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dc.contributor.affiliation"Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Faraday 9, Ciudad Universitaria de Cantoblanco, Madrid, 28049, Spain"," Departamento de Física de la Materia Condensada, Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias, Universidad Autónoma de Madrid, C/ Francisco Tomás y Valiente 7, Madrid, 28049, Spain"," Instituto de Energía Solar, Universidad Politécnica de Madrid, E.T.S.I. Telecomunicación, Ciudad Universitaria s/n Madrid, Madrid, 28040, Spain"," National Changhua University of Education, Bao-Shan Campus, No. 2, Shi-Da Rd, Changhua City, 500, Taiwan"," Department of Electrical Engineering and Information Technology, Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 1, Ilmenau, 98693, Germany"," Instituto de Microelectrónica de Madrid (CNM, CSIC), C/ Isaac Newton 8, Tres Cantos, Madrid 28760, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorSvatek S.A.
dc.contributor.authorAntolin E.
dc.contributor.authorLin D.-Y.
dc.contributor.authorFrisenda R.
dc.contributor.authorReuter C.
dc.contributor.authorMolina-Mendoza A.J.
dc.contributor.authorMuñoz M.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorKo T.-S.
dc.contributor.authorDe Lara D.P.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:34:19Z
dc.date.available2020-12-04T12:34:19Z
dc.date.issued2017
dc.identifier.doi10.1039/c6tc04699aen
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1446
dc.journal.titleJournal of Materials Chemistry Cen
dc.language.isoenen
dc.page.initial854en
dc.relation.projectIDTEMPS. A. S. and N. A. acknowledge funding from the European Commission through the FP7 ITN MOLESCO (Project Number 606728). E. A. gratefully acknowledges financial support from L?Or?al-UNESCO through the Women in Science program. A. J. M.-M. acknowledges the financial support from MICINN (Spain) through the scholarship BES-2012-057346. D. Y. and T. S. acknowledge the support from the Ministry of Science and Technology of the Republic of China under the MOST 104-2112-M-018-004 and 104-2221-E-018-017. D. P. is thankful for funding from the Spanish Ministry of Economy and Competitiveness through FIS2015-67367-C2-1-P. R. F. thanks the Netherlands Organisation for Scientific Research (NWO) for the financial support through the research programme Rubicon with the project number 680-50-1515. AC-G. acknowledges the support from the BBVA Foundation through the fellowship ?I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales? (?Semiconductores ultradelgados: hacia la optoelectronica flexible?), from the MINECO (Ram?n y Cajal 2014 program, RYC-2014-01406), from the MICINN (MAT2014-58399-JIN) and from the Comunidad de Madrid (MAD2D-CM Program (S2013/MIT-3007)), and the European Commission under the Graphene Flagship, contract CNECTICT-604391.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleGate tunable photovoltaic effect in MoS2 vertical p-n homostructuresen
dc.typeresearch articleen
dc.volume.number5en
dspace.entity.typePublication

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