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Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures

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dc.contributor.affiliation"Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Faraday 9, Ciudad Universitaria de Cantoblanco, Madrid, 28049, Spain"," Departamento de Física de la Materia Condensada, Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias, Universidad Autónoma de Madrid, C/ Francisco Tomás y Valiente 7, Madrid, 28049, Spain"," Instituto de Energía Solar, Universidad Politécnica de Madrid, E.T.S.I. Telecomunicación, Ciudad Universitaria s/n Madrid, Madrid, 28040, Spain"," National Changhua University of Education, Bao-Shan Campus, No. 2, Shi-Da Rd, Changhua City, 500, Taiwan"," Department of Electrical Engineering and Information Technology, Technische Universität Ilmenau, Gustav-Kirchhoff-Str. 1, Ilmenau, 98693, Germany"," Instituto de Microelectrónica de Madrid (CNM, CSIC), C/ Isaac Newton 8, Tres Cantos, Madrid 28760, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorSvatek S.A.
dc.contributor.authorAntolin E.
dc.contributor.authorLin D.-Y.
dc.contributor.authorFrisenda R.
dc.contributor.authorReuter C.
dc.contributor.authorMolina-Mendoza A.J.
dc.contributor.authorMuñoz M.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorKo T.-S.
dc.contributor.authorDe Lara D.P.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:34:19Z
dc.date.available2020-12-04T12:34:19Z
dc.date.issued2017
dc.identifier.doi10.1039/c6tc04699a
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1446
dc.journal.titleJournal of Materials Chemistry C
dc.language.isoen
dc.page.initial854
dc.relation.projectIDTEMPS. A. S. and N. A. acknowledge funding from the European Commission through the FP7 ITN MOLESCO (Project Number 606728). E. A. gratefully acknowledges financial support from L?Or?al-UNESCO through the Women in Science program. A. J. M.-M. acknowledges the financial support from MICINN (Spain) through the scholarship BES-2012-057346. D. Y. and T. S. acknowledge the support from the Ministry of Science and Technology of the Republic of China under the MOST 104-2112-M-018-004 and 104-2221-E-018-017. D. P. is thankful for funding from the Spanish Ministry of Economy and Competitiveness through FIS2015-67367-C2-1-P. R. F. thanks the Netherlands Organisation for Scientific Research (NWO) for the financial support through the research programme Rubicon with the project number 680-50-1515. AC-G. acknowledges the support from the BBVA Foundation through the fellowship ?I Convocatoria de Ayudas Fundacion BBVA a Investigadores, Innovadores y Creadores Culturales? (?Semiconductores ultradelgados: hacia la optoelectronica flexible?), from the MINECO (Ram?n y Cajal 2014 program, RYC-2014-01406), from the MICINN (MAT2014-58399-JIN) and from the Comunidad de Madrid (MAD2D-CM Program (S2013/MIT-3007)), and the European Commission under the Graphene Flagship, contract CNECTICT-604391.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleGate tunable photovoltaic effect in MoS2 vertical p-n homostructures
dc.typeresearch article
dc.volume.number5
dspace.entity.typePublication
relation.isAuthorOfPublication99208583-81aa-4676-a220-08a4e5c6a6dd
relation.isAuthorOfPublication.latestForDiscovery99208583-81aa-4676-a220-08a4e5c6a6dd

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