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Introduction to the issue on 2-D materials optoelectronics

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dc.contributor.affiliation"Department of Electrical Engineering, Yale University, New Haven, CT 06511, United States"," IMDEA Nanoscience Research Institute, Madrid, 28049, Spain"," Department of Materials Science and Engineering, Monash University, Clayton, VIC 3800, Australia"," School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States"," Technische Physik, Universität Würzburg, Würzburg, 97074, Germany"," Walter Schottky Institut, Physics Department, Technical University of Munich, Garching, D-85748, Germany"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorXia F.
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorBao Q.
dc.contributor.authorXing H.G.
dc.contributor.authorHofling S.
dc.contributor.authorHolleitner A.
dc.date.accessioned2020-12-04T12:34:19Z
dc.date.available2020-12-04T12:34:19Z
dc.date.issued2017
dc.identifier.doi10.1109/JSTQE.2017.2651659en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1439
dc.issue.number7820016en
dc.journal.titleIEEE Journal of Selected Topics in Quantum Electronicsen
dc.language.isoenen
dc.page.initial4en
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleIntroduction to the issue on 2-D materials optoelectronicsen
dc.typeeditorialen
dc.volume.number23en
dspace.entity.typePublication

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