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Electric-field screening in atomically thin layers of MoS2: The role of interlayer coupling

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dc.contributor.affiliation"Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands"," Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain"," Institute for Complex Systems (ISC), CNR, U.O.S. Sapienza, v. dei Taurini 19, 00185 Rome, Italy"," Instituto Madrileño de Estudios Avanzados en Nanociencia, IMDEA-Nanociencia, E-28049 Madrid, Spain"," Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, E-28049 Madrid, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorCappelluti E.
dc.contributor.authorRoldán R.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorGuinea, Francisco
dc.contributor.authorRubio-Bollinger G.
dc.date.accessioned2020-12-15T11:51:47Z
dc.date.available2020-12-15T11:51:47Z
dc.date.issued2013
dc.identifier.doi10.1002/adma.201203731en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/2101
dc.journal.titleAdvanced Materialsen
dc.language.isoenen
dc.page.initial899en
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectric-field screening in atomically thin layers of MoS2: The role of interlayer couplingen
dc.typeresearch articleen
dc.volume.number25en
dspace.entity.typePublication

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