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Optoelectronics, mechanical properties and strain engineering in MoS2

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dc.contributor.affiliation"Instituto Madrileño de Estudios, Avanzados en Nanociencia, Madrid, Spain"," Kavli Institute of Nanoscience, Delft University of Technology, Delft, Netherlands"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorCastellanos-Gomez A.
dc.contributor.authorBuscema M.
dc.contributor.authorvan der Zant H.S.J.
dc.contributor.authorSteele G.A.
dc.date.accessioned2020-12-04T11:13:05Z
dc.date.available2020-12-04T11:13:05Z
dc.date.issued2016
dc.identifier.doi10.1201/b19623-13
dc.identifier.urihttp://hdl.handle.net/20.500.12614/459
dc.language.isoen
dc.page.initial273
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleOptoelectronics, mechanical properties and strain engineering in MoS2
dc.title.alternative2D Materials for Nanoelectronics
dc.typebook part
dspace.entity.typePublication

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