Publication:
Band structure of twisted bilayer graphene on hexagonal boron nitride

dc.contributor.affiliation"Instituto de Ciencia de Materiales de Madrid, Csic, Sor Juana Inés de la Cruz 3, Cantoblanco, Madrid, 28049, Spain"," Imdea Nanoscience, Faraday 9, Madrid, 28015, Spain"," Donostia International Physics Center, Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorCea T.
dc.contributor.authorPantaleón, Pierre A.
dc.contributor.authorGuinea, Francisco
dc.date.accessioned2020-12-04T11:40:17Z
dc.date.available2020-12-04T11:40:17Z
dc.date.issued2020
dc.identifier.doi10.1103/PhysRevB.102.155136en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/728
dc.issue.number155136en
dc.journal.titlePhysical Review Ben
dc.language.isoenen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/H2020/881603/EU/Graphene Flagship Core Project 3/GrapheneCore3en
dc.relation.projectIDTEMPThis work was supported by funding from the European Commission, under the Graphene Flagship, Core 3, Grant No. 881603, and by the grants NMAT2D (Comunidad de Madrid, Spain) and SprQuMat and SEV-2016-0686 (Ministerio de Ciencia e Innovación, Spain).
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleBand structure of twisted bilayer graphene on hexagonal boron nitrideen
dc.typeresearch articleen
dc.volume.number102en
dspace.entity.typePublication

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