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Electronic band structure of transition metal dichalcogenides from ab initio and slater-koster tight-binding model

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dc.contributor.affiliation"Fundación IMDEA Nanociencia, C/Faraday 9, Campus Cantoblanco, Madrid, 28049, Spain"," Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Sor Juana Ines de la Cruz 3, Madrid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorSan-Jose P.
dc.contributor.authorRoldán R.
dc.contributor.authorSilva-Guillén, Jose Ángel
dc.date.accessioned2020-12-04T11:12:02Z
dc.date.available2020-12-04T11:12:02Z
dc.date.issued2016
dc.format.mimetypeapplication/pdf
dc.identifier.doi10.3390/app6100284
dc.identifier.urihttp://hdl.handle.net/20.500.12614/388
dc.issue.number284
dc.journal.titleApplied Sciences (Switzerland)
dc.language.isoen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/FP7/290846/EU/Novel uses for graphene/NOVGRAPHENE
dc.relation.projectIDTEMPWe appreciate useful conversations with Emmanuele Cappelluti, Pablo Ordejón, Francisco Guinea, María Pilar López-Sancho and Habib Rostami. Jose Angel Silva-Guillén acknowledges financial support from European Union's Seventh Framework Programme (FP7/2007-2013) through the ERC Advanced Grant NOV-GRAPHENE (GA 290846). Pablo San-Jose was supported by MINECO through Grant No. FIS2015-65706-P and the Ram?n y Cajal programme RYC-2013-14645. Rafael Rold?n acknowledges financial support from MINECO (FIS2014-58445-JIN).
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectronic band structure of transition metal dichalcogenides from ab initio and slater-koster tight-binding model
dc.typeresearch article
dc.type.hasVersionVoR
dc.volume.number6
dspace.entity.typePublication
relation.isAuthorOfPublication5b552196-e4f0-47a3-b0fa-c207f3368e0e
relation.isAuthorOfPublication.latestForDiscovery5b552196-e4f0-47a3-b0fa-c207f3368e0e

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