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Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors

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dc.contributor.affiliation"Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, Netherlands"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, Madrid, E-28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorIsland J.O.
dc.contributor.authorBlanter S.I.
dc.contributor.authorBuscema M.
dc.contributor.authorVan Der Zant H.S.J.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:17:06Z
dc.date.available2020-12-04T12:17:06Z
dc.date.issued2015
dc.identifier.doi10.1021/acs.nanolett.5b02523en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/997
dc.journal.titleNano Lettersen
dc.language.isoenen
dc.page.initial7853en
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleGate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistorsen
dc.typeresearch articleen
dc.volume.number15en
dspace.entity.typePublication

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