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Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

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dc.contributor.affiliation"GRIFO, Departamento Electrónica, Universidad de Alcalá, 28871 Alcalá de Henares, Madrid, Spain"," University Grenoble-Alpes, Grenoble, 38000, France"," CEA-Grenoble, INAC/SP2M/NPSC, Grenoble, 38054, France"," IMDEA Nanoscience, Autónoma University of Madrid, Madrid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorNúñez-Cascajero A.
dc.contributor.authorMonteagudo-Lerma L.
dc.contributor.authorValdueza-Felip S.
dc.contributor.authorNavío C.
dc.contributor.authorMonroy E.
dc.contributor.authorGonzález-Herráez M.
dc.contributor.authorNaranjo F.B.
dc.date.accessioned2020-12-04T11:13:05Z
dc.date.available2020-12-04T11:13:05Z
dc.date.issued2016
dc.identifier.doi10.7567/JJAP.55.05FB07en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/462
dc.issue.number05FB07en
dc.journal.titleJapanese Journal of Applied Physicsen
dc.language.isoenen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleStudy of high In-content AlInN deposition on p-Si(111) by RF-sputteringen
dc.typeconference paperen
dc.volume.number55en
dspace.entity.typePublication

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