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Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions

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dc.contributor.affiliation"Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore"," Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 117546, Singapore"," IMDEA Nanociencia, Calle Faraday 9, Cantoblanco, Madrid, 28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorChen X.
dc.contributor.authorHu H.
dc.contributor.authorTrasobares J.
dc.contributor.authorNijhuis C.A.
dc.date.accessioned2020-12-04T16:44:25Z
dc.date.available2020-12-04T16:44:25Z
dc.date.issued2019
dc.identifier.doi10.1021/acsami.9b02033
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1777
dc.journal.titleACS Applied Materials and Interfaces
dc.language.isoen
dc.page.initial21018
dc.relation.projectIDTEMPWe acknowledge the Ministry of Education (MOE) for supporting this research under award no. MOE2015-T2-2-134. The Prime Minister’s Office, Singapore under its Medium sized center program is also acknowledged for supporting this research. We thank Hong Zhang for extracting the effective contact area using “ImageJ”. We would like to acknowledge support by the National Research Foundation, Prime Minister’s Office, Singapore, under its Medium Sized Centre Programme.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleRectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions
dc.typeresearch article
dc.volume.number11
dspace.entity.typePublication

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