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Quantitative analysis of the defects in CVD grown graphene by plasmon-enhanced Raman scattering

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dc.contributor.affiliation"IMDEA Nanoscience, Faraday 9, Ciudad Universitaria de Cantoblanco, Madrid, 28049, Spain"," School of Science, Universidad Autónoma de Madrid, Ciudad Universitaria de Cantoblanco, Madrid, 28049, Spain"," Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan, 250100, China"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorLiu Y.
dc.contributor.authorFeng H.
dc.contributor.authorLuo F.
dc.date.accessioned2020-12-04T11:41:55Z
dc.date.available2020-12-04T11:41:55Z
dc.date.issued2020
dc.identifier.doi10.1016/j.carbon.2020.01.063en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/822
dc.journal.titleCarbonen
dc.language.isoenen
dc.page.initial153en
dc.relation.projectIDTEMPThis work has been supported by the China Scholarship Council, China , the National Natural Science Foundation of China, China , Shandong Provincial Natural Science Foundation, China and the Ministerio de Economía, Industria y Competitividad, Spain with funding numbers of 201606180013 , 51520105003 , 11804191 , ZR2018BA033 and MAT2017-89868-P , respectively.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleQuantitative analysis of the defects in CVD grown graphene by plasmon-enhanced Raman scatteringen
dc.typeresearch articleen
dc.volume.number161en
dspace.entity.typePublication

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