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Innovative patterning method for modifying few-layer MoS2 device geometries

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dc.contributor.affiliation"Fundación IMDEA Nanociencia, C/Faraday, 9, Madrid, 28049, Spain"," Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Cantoblanco, Madrid, 28049, Spain"," Physics Department, Lancaster University, Lancaster, LA1 4YB, United Kingdom"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorJiménez Urbanos F.
dc.contributor.authorBlack A.
dc.contributor.authorOsorio M.R.
dc.contributor.authorCasado S.
dc.contributor.authorGranados, Daniel
dc.contributor.authorBernardo-Gavito, Ramón
dc.date.accessioned2020-12-04T12:33:50Z
dc.date.available2020-12-04T12:33:50Z
dc.date.issued2017
dc.identifier.doi10.1117/12.2272702
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1391
dc.issue.number103540G
dc.journal.titleProceedings of SPIE - The International Society for Optical Engineering
dc.language.isoen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleInnovative patterning method for modifying few-layer MoS2 device geometries
dc.typeconference paper
dc.volume.number10354
dspace.entity.typePublication
relation.isAuthorOfPublication5b34b8c8-da33-4a46-9caf-81a5b7b35827
relation.isAuthorOfPublication4ab1c613-bb14-47eb-8c02-44dc93763c52
relation.isAuthorOfPublication.latestForDiscovery5b34b8c8-da33-4a46-9caf-81a5b7b35827

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