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Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3

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dc.contributor.affiliation"Dpto. de Física de la Materia Condensada, Universidad Autónoma de Madrid, Campus de Cantoblanco, Madrid, E-28049, Spain"," Materials of Interest in Renewable Energies Group (MIRE Group), Dpto. de Física de Materiales, Universidad Autónoma de Madrid, Campus de Cantoblanco, Madrid, E-28049, Spain"," ETSF Scientific Development Center, Dpto. de Física de Materiales, Universidad del País Vasco, San Sebastián, E-20018, Spain"," Instituto de Ciencia de Materiales “Nicolás Cabrera,”, Campus de Cantoblanco, Madrid, E-18049, Spain"," Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Campus de Cantoblanco, Madrid, E-28049, Spain"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, Madrid, E-18049, Spain"," IKERBASQUE, Basque Foundation for Science, Bilbao, E-48013, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorMolina-Mendoza A.J.
dc.contributor.authorBarawi M.
dc.contributor.authorBiele R.
dc.contributor.authorFlores E.
dc.contributor.authorAres J.R.
dc.contributor.authorSánchez C.
dc.contributor.authorRubio-Bollinger G.
dc.contributor.authorAgraït, Nicolás
dc.contributor.authorD'Agosta R.
dc.contributor.authorFerrer I.J.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:19:37Z
dc.date.available2020-12-04T12:19:37Z
dc.date.issued2015
dc.identifier.doi10.1002/aelm.201500126en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1209
dc.issue.number1500126en
dc.journal.titleAdvanced Electronic Materialsen
dc.language.isoenen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3en
dc.typeresearch articleen
dc.volume.number1en
dspace.entity.typePublication

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