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Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators

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dc.contributor.affiliation"Physikalisches Institut, Experimentelle Physik II, Universität Würzburg, Am Hubland, Würzburg97074, Germany"," Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, Cantoblanco, Madrid, E-28049, Spain"," V. S. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation"," Physics Department, Novosibirsk State University, Novosibirsk, 630090, Russian Federation"," A. V. Rzanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation"," Wilhelm Conrad Röntgen-Center for Complex Material Systems (RCCM), Universität Würzburg, Am Hubland, Würzburg, 97074, Germany"," IMDEA Nanoscience Institute, Madrid, E-28049, Spain"," School of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorStorz O.
dc.contributor.authorCortijo A.
dc.contributor.authorWilfert S.
dc.contributor.authorKokh K.A.
dc.contributor.authorTereshchenko O.E.
dc.contributor.authorVozmediano M.A.H.
dc.contributor.authorBode M.
dc.contributor.authorGuinea, Francisco
dc.contributor.authorSessi P.
dc.date.accessioned2020-12-04T11:12:02Z
dc.date.available2020-12-04T11:12:02Z
dc.date.issued2016
dc.identifier.doi10.1103/PhysRevB.94.121301en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/398
dc.issue.number121301en
dc.journal.titlePhysical Review Ben
dc.language.isoenen
dc.relation.projectIDTEMPThis research was supported in part by Spanish MECD Grant No. FIS2014-57432-P, the European Union structural funds, and the Comunidad de Madrid MAD2D-CM Program (S2013/MIT-3007), by the National Science Foundation under Grant No. NSF PHY11-25915, by the European Union Seventh Framework Programme under Grant Agreement No. 604391 Graphene Flagship, FPA2012-32828, and ERC, Grant No. 290846.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleMapping the effect of defect-induced strain disorder on the Dirac states of topological insulatorsen
dc.typeresearch articleen
dc.volume.number94en
dspace.entity.typePublication

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