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High throughput characterization of epitaxially grown single-layer MoS2

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dc.contributor.affiliation"Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Campus de Cantoblanco, Madrid, E-28049, Spain"," Nanoelectronic Lab, School of Electrical and Computer Engineering, University of Tehran, Tehran, 14399-56191, Iran"," Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland"," Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, CH-1015, Switzerland"," Instituto de Ciencia de los Materiales de Madrid (ICMM-CSIC), Madrid, E-28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorGhasemi F.
dc.contributor.authorFrisenda R.
dc.contributor.authorDumcenco D.
dc.contributor.authorKis A.
dc.contributor.authorde Lara D.P.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T12:32:43Z
dc.date.available2020-12-04T12:32:43Z
dc.date.issued2017
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.3390/electronics6020028en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1316
dc.issue.number28en
dc.journal.titleElectronics (Switzerland)en
dc.language.isoenen
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/696656/EU/Graphene-based disruptive technologies/GrapheneCore1en
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/604391/EU/Graphene-Based Revolutions in ICT And Beyond/GRAPHENEen
dc.relation.projectIDTEMPAndres Castellanos-Gomez acknowledges support from the European Commission (Graphene Flagship: contract CNECTICT-604391), the MINECO (Ram?n y Cajal 2014 program RYC-2014-01406 and program MAT2014-58399-JIN) and the Comunidad de Madrid (MAD2D-CM program S2013/MIT-3007). Riccardo Frisenda acknowledges support from The Netherlands Organisation for Scientific Research (NWO, Rubicon 680-50-1515). David Perez de Lara acknowledges support from the MINECO (program FIS2015-67367-C2-1-p). Andras Kis and Dimitri Dumcenco acknowledge funding from Swiss SNF Sinergia Grant No. 147607.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleHigh throughput characterization of epitaxially grown single-layer MoS2en
dc.typeresearch articleen
dc.type.hasVersionVoRen
dc.volume.number6en
dspace.entity.typePublication

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