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Long-lived excitons in GaN/AlN nanowire heterostructures

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dc.contributor.affiliation"Université Grenoble Alpes, Grenoble, 38000, France"," CEA-Grenoble, INAC, SP2M-NPSC, 17 av. des Martyrs, Grenoble, 38054, France"," I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, Gießen, D-35392, Germany"," Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Barcelona, Catalonia, 08193, Spain"," ICREA, Institut Català de Nanociència i Nanotecnologia (ICN2), Barcelona, Catalonia, 08193, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorBeeler M.
dc.contributor.authorLim C.B.
dc.contributor.authorHille P.
dc.contributor.authorBleuse J.
dc.contributor.authorSchörmann J.
dc.contributor.authorDe La Mata M.
dc.contributor.authorArbiol J.
dc.contributor.authorEickhoff M.
dc.contributor.authorMonroy E.
dc.date.accessioned2020-12-04T12:18:28Z
dc.date.available2020-12-04T12:18:28Z
dc.date.issued2015
dc.format.mimetypeapplication/pdfen
dc.identifier.doi10.1103/PhysRevB.91.205440en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1121
dc.issue.number205440en
dc.journal.titlePhysical Review B - Condensed Matter and Materials Physicsen
dc.language.isoenen
dc.relation.projectIDinfo:eu:eu-repo/grantAgreement/EC/FP7/278428/EU/GaN Quantum Devices for T-Ray Sources/TERAGANen
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleLong-lived excitons in GaN/AlN nanowire heterostructuresen
dc.typeresearch articleen
dc.type.hasVersionVoRen
dc.volume.number91en
dspace.entity.typePublication

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