Publication:
Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

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dc.contributor.affiliation"Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, CJ Delft, 2628, Netherlands"," Engineering and Science, Jacobs University Bremen Campus Ring 1, Bremen, 28779, Germany"," Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstr. 2, Leipzig, 04103, Germany"," Institute of Physics, University of Münster, Center for Nanotechnology, Münster, D-48149, Germany"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), Campus de Cantoblanco, Madrid, E-28049, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorIsland J.O.
dc.contributor.authorKuc A.
dc.contributor.authorDiependaal E.H.
dc.contributor.authorBratschitsch R.
dc.contributor.authorVan Der Zant H.S.J.
dc.contributor.authorHeine T.
dc.contributor.authorCastellanos-Gomez A.
dc.date.accessioned2020-12-04T11:13:08Z
dc.date.available2020-12-04T11:13:08Z
dc.date.issued2016
dc.format.mimetypeapplication/pdf
dc.identifier.doi10.1039/c5nr08219f
dc.identifier.urihttp://hdl.handle.net/20.500.12614/508
dc.journal.titleNanoscale
dc.language.isoen
dc.page.initial2589
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/300802/EU/Strain engineering of atomically-thin nanomembrane-based electromechanical devices/STRENGTHNANO
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/FP7/317451/EU/Nanoelectronics based on two-dimensional dichalcogenides/MOWSES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen access
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titlePrecise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain
dc.typeresearch article
dc.type.hasVersionVoR
dc.volume.number8
dspace.entity.typePublication

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