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Formation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene

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dc.contributor.affiliation"Institute of Electronic Materials Technology, Wólczy?ska 133, Warsaw, 01-919, Poland"," Imdea Nanoscience, Faraday 9, Madrid, E-28049, Spain"," School of Physics and Astronomy, University of Manchester, Manchester, M13 9PY, United Kingdom"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorMichałowski P.P.
dc.contributor.authorPasternak I.
dc.contributor.authorCiepielewski P.
dc.contributor.authorGuinea, Francisco
dc.contributor.authorStrupiński W.
dc.date.accessioned2020-12-04T15:25:31Z
dc.date.available2020-12-04T15:25:31Z
dc.date.issued2018
dc.identifier.doi10.1088/1361-6528/aac307
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1543
dc.issue.number305302
dc.journal.titleNanotechnology
dc.language.isoen
dc.relation.projectIDTEMPThis work was supported by 2020 research and innovation ment No. 696656.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleFormation of a highly doped ultra-thin amorphous carbon layer by ion bombardment of graphene
dc.typeresearch article
dc.volume.number29
dspace.entity.typePublication
relation.isAuthorOfPublicationb6753b24-6ed2-4561-b6a9-c50f6b9954ab
relation.isAuthorOfPublication.latestForDiscoveryb6753b24-6ed2-4561-b6a9-c50f6b9954ab

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