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Electronic properties and strain engineering in semiconducting transition metal dichalcogenides

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dc.contributor.affiliation"Instituto de Ciencia de Materiales de Madrid, CSIC, Spain"," Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-nanociencia), Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorRoldán R.
dc.contributor.authorGuinea, Francisco
dc.date.accessioned2020-12-04T12:33:50Z
dc.date.available2020-12-04T12:33:50Z
dc.date.issued2017
dc.identifier.doi10.1017/9781316681619.015
dc.identifier.urihttp://hdl.handle.net/20.500.12614/1387
dc.language.isoen
dc.page.initial259
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleElectronic properties and strain engineering in semiconducting transition metal dichalcogenides
dc.title.alternative2D Materials: Properties and Devices
dc.typebook part
dspace.entity.typePublication
relation.isAuthorOfPublicationb6753b24-6ed2-4561-b6a9-c50f6b9954ab
relation.isAuthorOfPublication.latestForDiscoveryb6753b24-6ed2-4561-b6a9-c50f6b9954ab

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