Publication:
Controlling In-Ga-Zn-O thin films transport properties through density changes

dc.contributor.affiliation"Institute of Electron Technology, al. Lotników 32/46, Warsaw, 02-668, Poland"," Department of Applied Physics, Chalmers University of Technology, Fysikgränd 3, Gothenburg, SE-412 96, Sweden"," Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, Warsaw, 00-662, Poland"," Division of Permanent Magnets and Applications, IMDEA Nanoscience, Madrid, Spain"en
dc.contributor.affiliation000000041762408X
dc.contributor.authorKaczmarski J.
dc.contributor.authorBoll T.
dc.contributor.authorBorysiewicz M.A.
dc.contributor.authorTaube A.
dc.contributor.authorThuvander M.
dc.contributor.authorLaw J.Y.
dc.contributor.authorKamińska E.
dc.contributor.authorStiller K.
dc.date.accessioned2020-12-04T11:13:04Z
dc.date.available2020-12-04T11:13:04Z
dc.date.issued2016
dc.identifier.doi10.1016/j.tsf.2016.04.012en
dc.identifier.urihttp://hdl.handle.net/20.500.12614/446
dc.journal.titleThin Solid Filmsen
dc.language.isoenen
dc.page.initial57en
dc.relation.projectIDTEMPThis study was partially supported by the Polish National Science Centre as part of PhD scholarship ETIUDA3, decision UMO-2015/16/T/ST7/00179 , and by the European Union within European Regional Development Fund, through grant Innovative Economy ( POIG.01.03.01-00-159/08 , “InTechFun”). The publication is part of research work at Chalmers University, thanks to a Swedish Institute scholarship.
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.accessRightsopen accessen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleControlling In-Ga-Zn-O thin films transport properties through density changesen
dc.typeresearch articleen
dc.volume.number608en
dspace.entity.typePublication

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